Selective silicon-on-insulator isolation structure and method

ABSTRACT

A first aspect of the present invention is a method of forming an isolation structure including: (a) providing a semiconductor substrate; (b) forming a buried N-doped region in the substrate; (c) forming a vertical trench in the substrate, the trench extending into the N-doped region; (d) removing the N-doped region to form a lateral trench communicating with and extending perpendicular to the vertical trench; and (e) at least partially filling the lateral trench and filling the vertical trench with one or more insulating materials.

BACKGROUND OF INVENTION

The integrated circuit performance advantages silicon-on-insulator (SOI) technology over bulk silicon technology include reduced latch-up, reduced parasitic junction capacitance and reduced short channel effects. On the other hand, SOI technology suffers from floating body effects as well as dopant uniformity effects, especially in fully depleted devices. For large wafer diameters, SOI substrates are difficult to fabricate and expensive. No cost effective method of combining the integrated circuit performance characteristics of SOI and bulk silicon technology exists in the industry.

SUMMARY OF INVENTION

A first aspect of the present invention is a method of forming an isolation structure comprising: (a) providing a semiconductor substrate; (b) forming a buried N-doped region in the substrate; (c) forming a vertical trench in the substrate, the trench extending into the N-doped region; (d) removing the N-doped region to form a lateral trench communicating with and extending perpendicular to the vertical trench; and (e) at least partially filling the lateral trench and filling the vertical trench with one or more insulating materials.

A second aspect of the present invention is a method of forming an isolation structure comprising: (a) forming a first patterned masking layer on a semiconductor substrate, whereby a portion of the substrate is exposed through an opening in the first masking layer; (b) implanting ions into the exposed portion of the substrate thereby forming a buried N-doped region in the substrate; (c) removing said first patterned masking layer and forming a second patterned masking layer on the substrate, an opening in the second masking layer aligning over a less than whole portion of the buried N-doped region; (d) etching a vertical trench in the substrate through the opening in the masking layer, the trench extending into the N-doped region; (e) laterally etching the N-doped region to form a lateral trench communicating with and perpendicular to the vertical trench; and (f) at least partially filling the lateral trench and filling vertical trench with one or more insulating materials.

A third aspect of the present invention is a semiconductor device comprising: a semiconductor substrate having a top surface; a first region of the substrate having a first N-well, a first P-well or both a first N-well and a first P-well extending into the semiconductor substrate from the top surface and bounded in a direction perpendicular to the top surface by a first vertical trench isolation extending perpendicular to the top surface, the source and drain of a first NFET, a first PFET or both a first NFET and a first PFET formed respectively in the first P-well or the first N-well of the first region; and a second region of the substrate having a second N-well, a second P-well or both a second N-well and a second P-well, a lateral trench isolation extending laterally in a direction parallel to the top surface into the second N-well, the second P-well or both the second N-well and the second P-well from a second vertical trench isolation, the second vertical trench isolation extending perpendicular to the top surface, the source and drain of a second NFET, a second PFET or both a second NFET and a second PFET formed respectively in the second P-well or the second N-well of the second region.

BRIEF DESCRIPTION OF DRAWINGS

The features of the invention are set forth in the appended claims. The invention itself, however, will be best understood by reference to the following detailed description of an illustrative embodiment when read in conjunction with the accompanying drawings, wherein:

FIGS. 1A through 1H are partial cross-sectional views illustrating a first embodiment for formation of a SSOI trench according to the present invention;

FIGS. 2A through 2D are partial cross-sectional views illustrating a second embodiment for formation of SSOI trenches according to the present invention;

FIGS. 3A through 3E are partial cross-sectional views illustrating a first embodiment for filling of SSOI trenches with an insulating material according to the present invention;

FIGS. 4A through 4C are partial cross-sectional views illustrating a second embodiment for filling of SSOI trenches with an insulating material according to the present invention;

FIG. 5A is a partial cross-sectional view of a completed SSOI isolation structure according to the present invention;

FIG. 5B is a partial cross-sectional view of an optional completed SSOI isolation structure according to the present invention;

FIG. 6 is a partial top view of an SSOI device according to the present invention;

FIG. 7A is a partial cross-sectional view through line 7A/B of FIG. 6 illustrating an SSOI structure filled according to the processes illustrated in FIGS. 3A through 3E;

FIG. 7B is a partial cross-sectional view through line 7A/B of FIG. 6 illustrating an SSOI structure filled according to the processes illustrated in FIGS. 4A through 4C;

FIGS. 8A through 8B are partial cross-sectional views of alternative SSOI device structures;

FIG. 9 is a partial cross-sectional view of an integrated circuit die having both bulk silicon devices and SSOI devices; and

FIG. 10 is a partial cross-sectional view of an integrated circuit die having both bulk silicon devices and SSOI devices with in a SOI substrate.

DETAILED DESCRIPTION

FIGS. 1A through 1H are partial cross-sectional views illustrating a first embodiment for formation of a SSOI trench according to the present invention. In FIG. 1A, a substrate 100 having a top surface 105 is illustrated. In a first example, substrate 100 is a monocrystalline (bulk) silicon substrate lightly doped P type (e.g. 1E17 atm/cm³). In a second example, substrate 100 is a substrate having at least a monocrystalline silicon layer extending to top surface 105. A first dielectric layer 110 having a top surface 115 is formed on top surface 105 of substrate 100. A second dielectric layer 120 is formed on a top surface 115 of second dielectric layer 110. In one example, first dielectric layer 110 is a thermal oxide having a thickness of about 40 to 100 Å and second dielectric layer 120 is silicon nitride having a thickness of about 900 to 1200 Å.

In FIG. 1B, a patterned photoresist layer 125 has been formed by well-known micro-photolithographic techniques on a top surface 130 of second dielectric layer 120. Patterned photoresist layer 125 acts as a mask for the formation of trenches 135A and 135B in first and second dielectric layers 110 and 120. Top surface 105 of substrate 100 are exposed in the bottom of trenches 135A and 135B. In the example of first dielectric layer 110 being thermal oxide and second dielectric layer 120 being silicon nitride, trenches 135A and 135B may be formed by any number of well known plasma etch processes for etching silicon nitride selective to thermal oxide followed by a wet etch of thermal oxide in an hydrofluoric acid (HF) containing etchant.

In FIG. 1C, patterned photoresist layer 125 of FIG. 1B is removed and an N type ion implantation performed using the now patterned first and second dielectric layers 110 and 120 as ion implantation masks in order to form N-doped region 140A and 140B in substrate 100. In one example, arsenic (As), phosphorus (P), antimony (Sb) ions or combinations thereof are implanted at energies of about 1 Kev to 10 Kev and doses of about 1E14 atm/cm² to 1E16 atm/cm². However, any species that dopes silicon N type may be used. A rapid thermal anneal (RTA) of 950° C. to 1050° C. is performed in order to activate the species in N-doped regions 140A and 140B. N-doped regions 140A and 140B extend a distance D1 from top surface 105 of substrate 100 into the substrate. In one example, D1 is about 300 to 1000 Å. N-doped regions 140A and 140B may also be formed by other dopant techniques such as solid state diffusion from a doping layer or a vapor.

In FIG. 1D, first and second dielectric layers 110 and 120 of FIG. 1C are removed and an epitaxial silicon layer 145 is grown on top surface 105 of substrate 100. While not illustrated for clarity, N-doped regions 140A and 140B may slightly extend into epitaxial silicon layer 145. An epitaxial layer of silicon is a layer having the same crystal structure and crystal plane orientation as the silicon substrate it is grown on. In one example, epitaxial layer 145 is 750 to 1250 Ã□ thick and is undoped.

In FIG. 1E, a first dielectric layer 150 is formed on a top surface 155 of epitaxial layer 145 and a second dielectric layer 160 is formed on a top surface 165 of the first dielectric layer. In one example, first dielectric layer 150 is a thermal oxide having a thickness of about 40 to 100 Å and second dielectric layer 160 is silicon nitride having a thickness of about 900 to 1200 Å.

In FIG. 1F, a patterned photoresist layer 170 is formed by well-known micro-photolithographic techniques on a top surface 175 of second dielectric layer 160. Patterned photoresist layer 170 acts as a mask for the formation of trenches 180 in first and second dielectric layers 150 and 160. Top surface 155 of epitaxial silicon layer 145 is exposed in the bottom of trenches 180. In the example of first dielectric layer 150 being thermal oxide and second dielectric layer 160 being silicon nitride, trenches 180 may be formed by any number of well known plasma etch processes for etching silicon nitride selective to thermal oxide followed by a wet etch of thermal oxide in an hydrofluoric acid (HF) containing etchant. Trenches 180 are aligned over N-doped regions 140A. In FIGS. 1G and 1H, SSOI trenches 185 are formed in epitaxial silicon layer 145 and substrate 100 by multi-step plasma etch process described infra.

As illustrated in FIG. 1H, SSOI trenches 185 include vertical trench portions 190, having a bottom surface 195, formed in epitaxial silicon layer 145 and substrate 100. Vertical trench portions 190 are perpendicular to top surface 105 of substrate 100 and top surface 155 of epitaxial silicon layer 145. SSOI trenches 185 further include lateral trench portions 200 extending parallel to top surface 105 of substrate 100. Bottom surface 195 of vertical trench portion 190 extends below lateral trench portions 200.

Turning to the formation of SSOI trenches 185, first, in FIG. 1G, patterned photoresist layer 170 (see FIG. 1F) is removed and vertical trench portions 190 of SSOI trenches 185 are etched through epitaxial layer 145 until at least N-doped regions 140A are exposed in the bottom of the trench. In the example of. FIG. 1G, all the N-doped material is removed from vertical trench portion 190. Vertical trench portion 190 may also be etched part way into N-doped regions 140A. Then in FIG. 1H, lateral trench portions 200 are etched and vertical trench portion 190 is extended a predetermined distance to form surface 195. Lateral trench portions 200 are formed by selective etching of N-doped regions 140A of FIG. 1G as described infra. A lateral trench portion 205 is also illustrated in FIG. 1H. Lateral trench portion 205 is part of an SSOI trench not in the plane of the drawing. The three-dimensional geometry possible for SSOI isolation is illustrated more clearly in FIGS. 5, 6A and 6B and described infra.

The multi-step plasma etch process used to form SSOI trenches 185, utilizes a plasma etch process that is highly selective undoped or lightly P-doped silicon to N-doped silicon. There are essentially four steps. In the first step, any residual oxide remaining on the top surface 155 of epitaxial layer 145 in the bottom of trenches 180 (see FIG. 1G) is removed using fluorine, chlorine and/or bromine based plasma chemistries with high RF bias. In the second step, vertical portions 190 of SSOI trenches 185 are etched using fluorine, chlorine and/or bromine based plasma chemistries containing a small quantity of oxygen. In the third step, lateral portions 200 (and 205) of trenches 185 are etched in a process that the selectively of N-doped silicon to undoped (or slightly P-doped silicon) can be as high as 500:1 using chlorine and/or bromine based plasma chemistries at high pressures. In the fourth step, vertical portion 190 of trench 185 is further etched to a predetermined depth using fluorine, chlorine and/or bromine based plasma chemistries containing a small quantity of oxygen. An example of a plasma etch tool capable of performing the processes listed supra is a 9400 inductively coupled plasma source (ICP) plasma etch tool manufactured by LAM Research Corp. of Fremont Calif. In an ICP tool two RF power sources are used, an upper (for generating a plasma) and a lower (for maintaining etch bias). Other ICP systems such as those manufactured by Applied Materials, Santa Clara, Calif., or Tokyo Electron Limited, Tokyo, Japan, may also be used.

FIGS. 2A through 2D are partial cross-sectional views illustrating a second embodiment for formation of a SSOI trenches according to the present invention. The second embodiment for formation of a SSOI trenches is similar to the first embodiment for formation of a SSOI trenches with the major difference being the elimination of the need to form an epitaxial silicon layer.

FIG. 2A is similar to FIG. 1C. In FIG. 2A, the patterned first and second dielectric layers 110 and 120 are ion implantation masks for defining N-doped regions 140C and 140D in substrate 100. In one example, As, P, Sb ions or combinations thereof are implanted at energies of about 150 Kev to 400 Kev and doses of about 1E14 atm/cm² to 1E16 atm/cm². However, any species that dopes silicon N type may be used. A rapid thermal anneal (RTA) of 950° C. to 1050° C. is performed in order to activate the species in N-doped regions 140C and 140D. N-doped regions 140C and 140D are buried a distance D2 from top surface 105 of substrate 100 into the substrate and have a vertical depth D3. In one example, D2 is about 750 to 1250 Å and D3 is about 300 to 1000 Å.

FIG. 2B is similar to FIG. 1E. In FIG. 2B, first and second dielectric layers 110 and 120 of FIG. 2A are removed and first dielectric layer 150 is formed on top surface 105 of substrate 100 and second dielectric layer 160 is formed on top surface 165 of the first dielectric layer. In example, first dielectric layer 150 is a thermal oxide having a thickness of about 40 to 100 Å and second dielectric layer 160 is silicon nitride having a thickness of about 900 to 1200 Å.

FIG. 2C is similar to FIG. 1F. In FIG. 2C, patterned photoresist layer 170 is formed by well-known micro-photolithographic techniques on top surface 165 of second dielectric layer 160. Patterned photoresist layer 170 acts as a mask for the formation of trenches 180 in first and dielectric layers 150 and 160. Top surface 105 of substrate 100 is exposed in the bottom of trenches 180. In the example of first dielectric layer 150 being thermal oxide and second dielectric layer 160 being silicon nitride, trenches 180 may be formed by any number of well known plasma etch processes for etching silicon nitride selective to thermal oxide followed by a wet etch of thermal oxide in an hydrofluoric acid (HF) containing etchant. Trenches 180 are aligned over N-doped regions 140C.

FIG. 2D is similar to FIG. 1H. In FIG. 1G, patterned photoresist layer 170 of FIG. 2C is removed and SSOI trenches 185 are formed in substrate 100 by the multi-step plasma etch process described supra. SSOI trenches 185 include vertical trench portions 190, having a bottom 195, formed in substrate 100. Vertical trench portions 190 are perpendicular to top surface 105 of substrate 100. SSOI trenches 185 further include lateral trench portions 200 extending parallel to top surface 105 of substrate 100. Bottom 195 of vertical trench portion 190 extends below lateral trench portions 200. Lateral trench portions 200 are formed by selective etching of N-doped regions 140A of FIG. 2C as described supra.

FIGS. 3A through 3E are partial cross-sectional views illustrating a first embodiment for filling of SSOI trenches with an insulating material according to the present invention. While the SSOI trench fill processes illustrated in FIGS. 3A through 3EC are illustrated with SSOI trenches formed by the first or epitaxial method of forming SSOI trenches, the processes illustrated and described infra are applicable to the second, non-epitaxial, method of forming SSOI trenches illustrated in FIGS. 2A through 2D and described supra. In FIG. 3A, SSOI trenches 185 are partially filled with a first insulator 210. In one example, first insulator 210 is a high temperature resistant spin-on-glass. After spin-on application, the material is annealed at about 700° C. to 1000° C. in an inert or steam atmosphere. The thickness of first insulator 210 after anneal is D4 and the vertical thickness of lateral trench portions 200 is D5. In one example, the ratio of D4/D5 is about 0.5. In FIG. 3B, SSOI trenches 185 are overfilled with a second insulator 215. In one example, second insulator 215 is also high temperature resistant spin-on-glass which is also annealed at about 700° C. to 1000° C. in an inert or steam atmosphere. The two-step fill process and reduces the amount of stress in the completed SSOI structure. The two-step fill process may be controlled to include or not include a void area in the upper region of lateral trench portions 200.

In FIG. 3C, both first and second insulating layers 210 and 215 are removed from vertical trench portion 190 of SSOI trenches 185 by a plasma etch process. First and second insulating layers 210 and 215 are not removed from lateral trench portions 200 of SSOI trenches 185. In FIG. 3D vertical trench portion 190 of SSOI trench 185 is overfilled with a third insulator 220. In one example, third insulator 220 is high-density plasma (HDP) oxide. In FIG. 3E, a chemical-mechanical-polish (CMP) step is performed in order to remove third insulator 220 from top surface 165 of second dielectric layer 160. Second dielectric layer 160 is used as a CMP etch stop layer. The fill process is completed by about a 30 to 60 minute at about 700°0 C. to 1000° C. anneal in an inert atmosphere.

FIGS. 4A through 4C are partial cross-sectional views illustrating a second embodiment for filling of SSOI trenches with an insulating material according to the present invention. While the SSOI trench fill processes illustrated in FIGS. 4A through 4C are illustrated with SSOI trenches formed by the first or epitaxial method of forming SSOI trenches, the processes illustrated and described infra are applicable to the second, non-epitaxial, method of forming SSOI trenches illustrated in FIGS. 2A through 2D and described supra.

In FIG. 4A, SSOI trenches 185 are partially filled with a first insulator 225. In one example, first insulator 225 is a tetraethoxysilane (TEOS) chemical-vapor-deposition CVD oxide. The thickness of first insulator 225 is D5 and the vertical thickness of lateral trench portions 200 is D6. In one example, the ratio of D6/D5 is about 0.7 to 0.9. In FIG. 4B, SSOI trenches 185 are overfilled with a second insulator 230. In one example, second insulator 230 is HDP oxide. Then about a 30 to 60 minute at about 700° C. to 1000° C. anneal in an inert atmosphere e is performed. The two-step fill process and reduces the amount of stress in the completed SSOI structure. The two-step fill process may be controlled to include or not include a void area in the upper region of lateral trench portions 200. In FIG. 4C, a chemical-mechanical-polish (CMP) step is performed in order to remove second insulator 230 from top surface 165 of second dielectric layer 160. Second dielectric layer 160 is used as a CMP etch stop layer.

FIG. 5A is a partial cross-sectional view of a completed SSOI isolation structure according to the present invention. In FIG. 5A, a completed SSOI isolation 185A is illustrated after removal of first and second dielectric layers 150 and 160 (see FIG. 3E). Though the fill of SSOI isolation 185A is that of the first fill embodiment illustrated in FIGS. 3A through 3E and described supra, the fill structure may be that of the second fill embodiment illustrated in FIGS. 4A through 4C and described supra may be substituted. Also, epitaxial layer 145 will not be present as if the SSOI trench was formed by the second embodiment of the present invention illustrated in FIGS. 2A through 2D and described supra.

FIG. 5B is a partial cross-sectional view of an optional completed SSOI isolation structure according to the present invention. In FIG. 5B, a completed SSOI isolation 185B is illustrated after removal of first and second dielectric layers 155 and 160 (see FIG. 3E). The only difference between SSOI isolation 185A of FIG. 5A and SSOI isolation 185B is the presence of a liner 235 between first insulator 210, second insulator 215 and third insulator 220 and silicon substrate 100 and epitaxial layer 145. Liner 235 is formed prior to the processes illustrated in FIG. 3A or 4A and described supra. In one example, liner 235 comprised of a first layer of rapid thermal oxidation (RTO) oxide formed on exposed silicon surfaces of the unfilled SSOI trenched coated with a conformal plasma-enhanced CVD (PECVD) silicon nitride layer. In one example, the RTO oxide is about 100 to 150 Å thick and the PECVD silicon nitride layer is about 50 to 80 Å thick.

FIG. 6 is a partial top view of an SSOI device 240 according to the present invention. In FIG. 6, SSOI device 240 includes a metal-oxide-silicon (MOS) transistor 245 and SSOI isolation 250. SSOI isolation 250 includes a vertical portion 255 and a lateral portion 260. The extent of the lateral portion is defined by the dashed lines. Note there is an area 265 into which neither vertical portion 255 or lateral portion 260 of SSOI isolation 250 extends. MOS transistor 245 includes a gate electrode 270 flanked by spacers 275. In one example, gate electrode 270 is polysilicon. A portion of gate electrode 270 is aligned over area 265. MOS transistor 245 has a length “L” and a width “W.” FIG. 7A is a partial cross-sectional view through line 7A/B of FIG. 6 illustrating an SSOI structure filled according to the processes illustrated in FIGS. 3A through 3E. In FIG. 7A, the fill of SSOI isolation 250 (see FIG. 6) is that of the second fill embodiment illustrated in FIGS. 1A through 1H and described supra. Additionally, for clarity, no liner 235 (see FIG. 5B) is illustrated, but is not precluded. In FIG. 7A, it can bee seen that MOS transistor 245 further includes source/drain (S/D) regions 280 on either side of a body region 285 and a gate dielectric 290 formed between gate electrode 270 and body region 285.

FIG. 7B is a partial cross-sectional view through line 6A/B of FIG. 6 illustrating an SSOI structure filled according to the processes illustrated in FIGS. 4A through 4C. In FIG. 7B, the fill of SSOI isolation 250 (see FIG. 6) is that of the first fill embodiment illustrated in FIGS. 2A through 2D and described supra. Additionally, for clarity, no liner 235 (see FIG. 5B) is illustrated, but is not precluded. In FIG. 7B, it can be seen that MOS transistor 245 further includes S/D regions 280 on side of a body region 285 and a gate dielectric 290 formed between gate electrode 270 and body region 285.

FIGS. 8A through 8B are partial cross-sectional views of alternative SSOI device structures. The primary difference between FIGS. 8A, 8B, 8C, and 8D is the alignment of the transistor gate to lateral portion 260 of SSOI isolation 250. In FIG. 8A, a sidewall 295 of lateral portion 260 of SSOI isolation 250 is aligned with an outer edge 300 of spacer 275. In FIG. 8B, sidewall 295 of lateral portion 260 of SSOI isolation 250 is aligned with between outer edge 300 of spacer 275 and a sidewall 305 of gate electrode 270. In FIG. 8C, a sidewall 295 of lateral portion 260 of SSOI isolation 250 is aligned with sidewall 305 of gate electrode 270. In FIG. 8D, sidewall 295 of lateral portion 260 of SSOI isolation 250 is aligned under gate electrode 270. In all four SSOI devices of FIGS. 8A, 8B, 8C, and 8D, lateral portion 260 of SSOI isolation 250 does not totally isolate body 285 from the rest of substrate 100. Thus, an electrical connection may be established between body 285 and substrate 100 to prevent or at least limit floating body effects while at the same time while still reducing short channel effects because lateral portion 260 of SSOI isolation 250 limits source/drain 280 junction area.

In FIGS. 8A through 8D, source/drains 280 are contacting lateral portion 260 of SSOI isolation 250. Thus, FIGS. 8A-8D illustrate fully depleted transistors. Standard, or non depleted transistors, wherein source/drains 280 do not contact lateral portion 260 of SSOI isolation 250 may also be formed by control of the distance between the lateral portion and the top surface of the substrate.

FIG. 9 is a partial cross-sectional view of an integrated circuit die having both bulk silicon devices and SSOI devices. In FIG. 9, an N-channel field effect transistor (NFET) device 405A is formed in a P-well 410A and a P-channel field effect transistor (PFET) 405B is formed in a N-well 410B. NFET 405A and PFET 405B are isolated from each other and other devices in substrate 400 by vertical trench isolation 415. P-well 410A and N-well 410B are aligned under and in contact with vertical trench isolation 415. P-well 410A and N-well 410B are bounded by vertical trench isolation 415 only in the vertical direction and physical and electrical contact exists between the N and P wells and substrate 400. Trench isolation 415 may be a dielectric material such as TEOS or HDP oxide. NFET 405A and PFET 405B are examples of conventional bulk silicon transistors.

Also, in FIG. 9, an NFET device 405C is formed in a P-well 410C and a PFET 405D is formed in a N-well 410D. P-well 410C and N-well 410D need only extend under lateral trench portions 425 of SSOI isolation 420. NFET 405C and PFET 405D are isolated from each other and other devices in substrate 400 by SSOI isolation 420 according to the present invention. P-well 410C and N-well 410D are aligned under and in contact with lateral trench portions 425 of SSOI isolation 420. P-well 410C and N-well 410D are only partially bounded by lateral trench portions 425, as physical and electrical contact exists between the N and P wells and substrate 400. NFET 405C and PFET 405D are examples of SSOI transistors.

FIG. 10 is a partial cross-sectional view of an integrated circuit die having both bulk silicon devices and SSOI devices with in an SOI substrate. The only difference between FIG. 10 and FIG. 9 is a buried oxide layer 430 of FIG. 10.

The description of the embodiments of the present invention is given above for the understanding of the present invention. It will be understood that the invention is not limited to the particular embodiments described herein, but is capable of various modifications, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, it is intended that the following claims cover all such modifications and changes as fall within the true spirit and scope of the invention. 

1. A method of forming an isolation structure comprising, in the order recited: (a) providing a semiconductor substrate; (b) forming a buried N-doped region in said substrate; (c) forming a vertical trench in said substrate, said trench extending into said N-doped region; (d) removing said N-doped region to form a lateral trench communicating with and extending perpendicular to said vertical trench; (e) partially filling said vertical and lateral trenches with a first insulating material; (f) removing said first insulating material from said vertical trench; (g) filling unfilled portions of said lateral trench and refilling said vertical trench with said first insulating material; (h) removing said first insulating material from said vertical trench; and (i) refilling said vertical trench with a second insulating material.
 2. The method of claim 1, further including annealing said first insulating material in an inert atmosphere after steps (e) and (g) and annealing said first and second insulating material in an inert atmosphere after step (i).
 3. The method of claim 1, wherein said first and second insulating materials are independently selected from the group consisting of spin-on-glass, Glass, TEOS and HDP oxide.
 4. The method of claim 1, wherein said first insulating material is spun applied in steps (e) and (g).
 5. The method of claim 1, wherein said first and second insulating materials are independently selected from the group consisting of TEOS and HDP oxide.
 6. The method of claim 1, further comprising: before step (e), forming an insulating liner on all exposed surfaces of said vertical and lateral trenches.
 7. The method of claim 1, further comprising: before step (b), forming an epitaxial silicon layer on said substrate.
 8. The method of claim 1, wherein said substrate is intrinsic or P-doped to a maximum concentration of 1E17 atm/cm³ and said buried N-doped region are formed by ion implantation of an N-type dopant ion with a dose of 1E14 to 1E16 atm/cm².
 9. The method of claim 1, wherein said buried N-doped region is formed by ion implantation of arsenic, phosphorous or antimony or combinations thereof.
 10. The method of claim 1, wherein steps (c) and (d) are independently performed using one or more plasma etch processes.
 11. The method claim 1, further comprising: forming an N-well or a P-well region in said substrate, said N-well or P-well partially bounded by said lateral trench; and respectively forming the source and drain of an NFET or a PFET in said N-well or said P-well.
 12. A method of forming an isolation structure, comprising, in the order recited: (a) forming a first patterned masking layer on a semiconductor substrate, whereby a portion of said substrate is exposed through an opening in said first masking layer; (b) implanting ions into the exposed portion of said substrate thereby forming a buried N-doped region in said substrate; (c) removing said first patterned masking layer and forming a second patterned masking layer on said substrate, an opening in said second patterned masking layer aligning over a less than whole portion of said buried N-doped region; (d) etching a vertical trench in said substrate through said opening in said second patterned masking layer, said trench extending into said N-doped region; (c) laterally etching said N-doped region to form a lateral trench communicating with and extending perpendicular to said vertical trench; (f) partially filling said vertical and lateral trenches with a first insulating material; (g) removing said first insulating material front said vertical trench; (h) filling unfilled portions of said lateral trench and refilling said vertical trench with said first insulating material; (i) removing said first insulating material from said vertical trench; and (j) refilling said vertical trench with a second insulating material.
 13. The method of claim 12, further including annealing said first insulating material in an inert atmosphere after steps (f) and (h) and annealing said first and said second insulating material in an inert atmosphere after (j).
 14. The method of claim 12, wherein said first and second insulating material are independently selected from the group consisting of Spin-On-Glass, TEOS and HDP oxide.
 15. The method of claim 12, wherein said first insulating material is spun applied in steps (f) and (h).
 16. The method claim 12, wherein said first and second insulating materials are independently selected from the group consisting of TEOS and HDP oxide.
 17. The method of claim 12, further comprising: before step (f), forming an insulating liner on all exposed surfaces of said vertical and lateral trenches.
 18. The method of claim 12, further comprising: before step (b), forming an epitaxial silicon layer on said substrate.
 19. The method of claim 12, wherein said substrate is intrinsic or P-doped to a maximum concentration of 1E17 atm/cm³ and said buried N-doped region are formed by ion implantation of an N-type dopant ion with a dose of 1E14 to 1E16 atm/cm².
 20. The method of claim 12, wherein said buried N-doped region is formed by ion implantation of arsenic or phosphorous.
 21. The method of claim 12, wherein steps (c) and (d) are independently performed using one or more plasma etch processes.
 22. The method claim 12, further comprising: forming an N-well or a P-well region in said substrate, said N-well or P-well partially bounded by said lateral trench; and respectively forming the source and drain of an NFET or a PFET in said N-well or said P-well. 